MOCVD Process Flow

1

Substrate Loading & Preparation

Procedure

Load cleaned substrate (sapphire, SiO₂/Si) into MOCVD reactor
Perform in-situ thermal anneal at 600-800°C under carrier gas

Key Parameters

Temperature

600-800°C

Carrier Gas

H₂ or Ar

2

Precursor Introduction & Growth

Procedure

Introduce metalorganic precursor (Mo(CO)₆, W(CO)₆)
Simultaneously introduce chalcogen precursor (H₂S, H₂Se)
Optional oxygen flow for nucleation control

Key Parameters

Temperature

500-1000°C

Pressure

Tens to hundreds of Torr

Duration

Minutes to tens of minutes

3

Cool Down & Unloading

Procedure

Cease precursor flows
Allow system to cool under carrier gas flow
Unload grown TMD films

Safety Measures

Prevent unwanted reactions

Avoid oxidation during cooling